BC857W,135
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- Mfr.Part #
- BC857W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857W - SMALL SIGN
- Stock
- 6,909
- In Stock ：
- 6,909
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Base Part Number :
- BC857
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 100MHz
- Collector-Base Capacitance-Max :
- 5pF
- Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC857W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857W,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857W,135 Applications
There are a lot of Nexperia USA Inc.
BC857W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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