BC857W,135
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- Mfr.Part #
- BC857W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857W - SMALL SIGN
- Stock
- 6,909
- In Stock ：
- 6,909
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC857
- Terminal Position :
- Dual
- Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 100MHz
- Collector-Base Capacitance-Max :
- 5pF
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- BC857W,135
BC857W,135 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857W,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857W,135 Applications
There are a lot of Nexperia USA Inc.
BC857W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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