BC857W,135
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- Mfr.Part #
- BC857W,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 6,909
- In Stock ：
- 6,909
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- BC857
- Collector-Base Capacitance-Max :
- 5pF
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC857W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857W,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 125 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC857W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857W,135 Applications
There are a lot of Nexperia USA Inc.
BC857W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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