BC857SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Package / Case :

6-VSSOP, SC-88, SOT-363

Max Breakdown Voltage :

45V

hFE Min :

200

Transition Frequency :

250MHz

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Lead Free :

Lead Free

Frequency :

250MHz

Published :

2011

Current :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

650mV

Pbfree Code :

yes

Number of Terminations :

6

ECCN Code :

EAR99

Width :

1.25mm

Collector Emitter Voltage (VCEO) :

650mV

Collector Base Voltage (VCBO) :

50V

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Pin Count :

6

Max Collector Current :

100mA

Operating Temperature :

150°C TJ

Voltage :

65V

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Polarity :

PNP

Height :

800μm

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

45V

Length :

2mm

Number of Pins :

6

Base Part Number :

BC857

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Reference Standard :

AEC-Q101

Mount :

Surface Mount

Power Dissipation :

250mW

Factory Lead Time :

4 Weeks