BC857SE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain-Min (hFE) :

125

Surface Mount :

yes

Frequency - Transition :

250MHz

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Manufacturer :

Rochester Electronics LLC

Voltage - Collector Emitter Breakdown (Max) :

45V

Qualification Status :

COMMERCIAL

Current - Collector (Ic) (Max) :

100mA

Product Status :

Active

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G6

Reach Compliance Code :

Unknown

Series :

-

Polarity/Channel Type :

PNP

Package :

Bulk

Collector-Emitter Voltage-Max :

45 V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Supplier Device Package :

SOT-363

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA, 5V

Pbfree Code :

yes

Power - Max :

250mW

Transistor Type :

2 PNP (Dual)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Current - Collector Cutoff (Max) :

15nA (ICBO)

Package / Case :

6-VSSOP, SC-88, SOT-363

Collector Current-Max (IC) :

0.1 A

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS

Number of Terminals :

6

Operating Temperature :

150°C (TJ)

Number of Elements :

2