BC857QASZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

100mA

Packaging :

Cut Tape (CT)

Published :

2015

Factory Lead Time :

4 Weeks

Frequency - Transition :

100MHz

Number of Terminations :

6

Polarity/Channel Type :

PNP

Operating Temperature :

150°C TJ

Case Connection :

COLLECTOR

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

100mV

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Power - Max :

350mW

Collector Base Voltage (VCBO) :

50V

Configuration :

SEPARATE, 2 ELEMENTS

Pin Count :

6

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Collector Emitter Breakdown Voltage :

45V

Terminal Form :

NO LEAD

Reference Standard :

AEC-Q101; IEC-60134

Max Breakdown Voltage :

45V

Transition Frequency :

100MHz

Package / Case :

6-XFDFN Exposed Pad

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2mA, 5V

Max Power Dissipation :

350mW

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-N6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Type :

2 PNP (Dual)

Series :

Automotive, AEC-Q101

Number of Elements :

2