BC857CWH6327XTSA1
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- Mfr.Part #
- BC857CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 10,116
- In Stock ：
- 10,116
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 650mV
- Published :
- 2008
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Length :
- 2mm
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- BC857
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Max Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Height :
- 800μm
- Width :
- 1.25mm
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 250MHz
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 650mV
- Datasheets
- BC857CWH6327XTSA1
BC857CWH6327XTSA1 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857CWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC857CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC857CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC857CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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