BC857CWH6327XTSA1
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- Mfr.Part #
- BC857CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 10,116
- In Stock ：
- 10,116
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 250mW
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Height :
- 800μm
- Collector Emitter Saturation Voltage :
- 650mV
- Published :
- 2008
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Length :
- 2mm
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 250MHz
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.25mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Power Dissipation :
- 250mW
- Current - Collector (Ic) (Max) :
- 100mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 650mV
- Base Part Number :
- BC857
- Frequency :
- 250MHz
- Datasheets
- BC857CWH6327XTSA1
BC857CWH6327XTSA1 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857CWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC857CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC857CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC857CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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