BC857CWH6327XTSA1
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- Mfr.Part #
- BC857CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 10,116
- In Stock ：
- 10,116
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 650mV
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Base Part Number :
- BC857
- Frequency :
- 250MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Radiation Hardening :
- No
- Max Power Dissipation :
- 250mW
- Width :
- 1.25mm
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Length :
- 2mm
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 650mV
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 250MHz
- Mount :
- Surface Mount
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Published :
- 2008
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 800μm
- Halogen Free :
- Halogen Free
- Datasheets
- BC857CWH6327XTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857CWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC857CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC857CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC857CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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