BC857CQAZ
- Mfr.Part #
- BC857CQAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A DFN1010D-3
- Stock
- 19,251
- In Stock :
- 19,251
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 280mW
- Frequency - Transition :
- 100MHz
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 400mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 280mW
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2014
- Terminal Form :
- NO LEAD
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Reference Standard :
- AEC-Q101; IEC-60134
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-N3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- 3-XDFN Exposed Pad
- Datasheets
- BC857CQAZ
BC857CQAZ Documents

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857CQAZ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.When VCE saturation is 400mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857CQAZ Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857CQAZ Applications
There are a lot of Nexperia USA Inc.
BC857CQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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