BC857CLT3G
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- Mfr.Part #
- BC857CLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 4,237
- In Stock ：
- 4,237
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2005
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC857CLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857CLT3G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857CLT3G Applications
There are a lot of ON Semiconductor
BC857CLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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