BC857CLT1
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- Mfr.Part #
- BC857CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 79,141
- In Stock ：
- 79,141
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Width :
- 1.3mm
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Max Collector Current :
- 100mA
- Published :
- 2004
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -45V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 420
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 7 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Height :
- 940μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Current Rating :
- -100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.9mm
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- -650mV
- Datasheets
- BC857CLT1
BC857CLT1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857CLT1G Applications
There are a lot of ON Semiconductor
BC857CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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