BC857CLT1
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- Mfr.Part #
- BC857CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 79,141
- In Stock ：
- 79,141
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -100mA
- hFE Min :
- 420
- Surface Mount :
- yes
- Packaging :
- Cut Tape (CT)
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 7 Weeks
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -45V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -650mV
- Max Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Published :
- 2004
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Height :
- 940μm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC857CLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857CLT1G Applications
There are a lot of ON Semiconductor
BC857CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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