BC857CE6327HTSA1
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- Mfr.Part #
- BC857CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 66,978
- In Stock ：
- 66,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 26 Weeks
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 650mV
- Height :
- 900μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Power Dissipation :
- 330mW
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -45V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 250MHz
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 250MHz
- Max Power Dissipation :
- 330mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Not Halogen Free
- Current Rating :
- -100mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 650mV
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Length :
- 2.9mm
- Published :
- 2011
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC857
- Number of Pins :
- 3
- Datasheets
- BC857CE6327HTSA1
BC857CE6327HTSA1 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857CE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC857CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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