BC857CE6327HTSA1
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- Mfr.Part #
- BC857CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 66,978
- In Stock ：
- 66,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Height :
- 900μm
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current Rating :
- -100mA
- Voltage - Rated DC :
- -45V
- Base Part Number :
- BC857
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Length :
- 2.9mm
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 650mV
- Transition Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2011
- Collector Emitter Voltage (VCEO) :
- 650mV
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 330mW
- Factory Lead Time :
- 26 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Max Power Dissipation :
- 330mW
- Max Breakdown Voltage :
- 45V
- Halogen Free :
- Not Halogen Free
- Frequency :
- 250MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Datasheets
- BC857CE6327HTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857CE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC857CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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