BC857C

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

50V

Max Power Dissipation :

300mW

Transition Frequency :

200MHz

Transistor Element Material :

SILICON

Length :

3.05mm

Weight :

7.994566mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Height :

1mm

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Current - Collector Cutoff (Max) :

15nA

Collector Emitter Saturation Voltage :

-650mV

Base Part Number :

BC857C

ECCN Code :

EAR99

Contact Plating :

Tin

Number of Pins :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Lead Free :

Lead Free

Element Configuration :

Single

Factory Lead Time :

19 Weeks

Collector Emitter Breakdown Voltage :

45V

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Pbfree Code :

yes

Current Rating :

-100mA

Polarity/Channel Type :

PNP

Frequency :

200MHz

Published :

2008

hFE Min :

420

Power - Max :

300mW

Transistor Type :

PNP

Max Collector Current :

100mA

Radiation Hardening :

No

Mount :

Surface Mount

Max Breakdown Voltage :

45V

Voltage - Rated DC :

-45V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

REACH SVHC :

No SVHC

Gain Bandwidth Product :

200MHz

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

45V

Transistor Application :

SWITCHING

Power Dissipation :

350mW