BC857BWT1G
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- Mfr.Part #
- BC857BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC70-3
- Stock
- 25,827
- In Stock ：
- 25,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Saturation Voltage :
- -650mV
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Length :
- 2.2mm
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -45V
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 150mW
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Height :
- 900μm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Surface Mount :
- yes
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Width :
- 1.35mm
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Published :
- 2005
- Base Part Number :
- BC85**W
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Pin Count :
- 3
- Transistor Type :
- PNP
- Current Rating :
- -100mA
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- hFE Min :
- 150
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 150mW
- Terminal Position :
- Dual
- Datasheets
- BC857BWT1G
BC857BWT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857BWT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BWT1G Applications
There are a lot of ON Semiconductor
BC857BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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