BC857BWT1G
- Mfr.Part #
- BC857BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC70-3
- Stock
- 25,827
- In Stock :
- 25,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 5 Weeks
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Length :
- 2.2mm
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- hFE Min :
- 150
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Power Dissipation :
- 150mW
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC85**W
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Pin Count :
- 3
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Height :
- 900μm
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Surface Mount :
- yes
- Voltage - Rated DC :
- -45V
- Width :
- 1.35mm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- -650mV
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC857BWT1G

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857BWT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BWT1G Applications
There are a lot of ON Semiconductor
BC857BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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