BC857BWH6327XTSA1
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- Mfr.Part #
- BC857BWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 24,934
- In Stock ：
- 24,934
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100mA
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- Frequency :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 650mV
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Height :
- 800μm
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 650mV
- Width :
- 1.25mm
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC857
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Length :
- 2mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Additional Feature :
- LOW NOISE
- Max Power Dissipation :
- 250mW
- Published :
- 2011
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Datasheets
- BC857BWH6327XTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857BWH6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC857BWH6327XTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC857BWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC857BWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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