BC857BW,135
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- Mfr.Part #
- BC857BW,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 292,674
- In Stock ：
- 292,674
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Base Part Number :
- BC857
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2009
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Collector-Base Capacitance-Max :
- 5pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Terminal Form :
- Gull wing
- Current :
- 1A
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage :
- 45V
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Datasheets
- BC857BW,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857BW,135 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BW,135 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857BW,135 Applications
There are a lot of Nexperia USA Inc.
BC857BW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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