BC857BV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-563, SOT-666

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Length :

1.6mm

Factory Lead Time :

15 Weeks

Mounting Type :

Surface Mount

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

-45V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Polarity :

PNP

Current - Collector (Ic) (Max) :

100mA

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Height :

600μm

Current - Collector Cutoff (Max) :

15nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

-45V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Dual

Qualification Status :

Not Qualified

Max Power Dissipation :

150mW

Transistor Type :

2 PNP (Dual)

Frequency :

100MHz

Max Collector Current :

-100mA

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Collector Emitter Saturation Voltage :

-400mV

Weight :

3.005049mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

45V

hFE Min :

220

Additional Feature :

High Reliability

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Published :

2007

Number of Elements :

2

Power Dissipation :

150mW

ECCN Code :

EAR99

Base Part Number :

BC857BV

Collector Base Voltage (VCBO) :

-50V

Width :

1.2mm

Gain Bandwidth Product :

100MHz

Terminal Form :

Flat

Pin Count :

6

Number of Pins :

6