BC857BV,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Contact Plating :

Tin

Base Part Number :

BC857BV

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Collector Emitter Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

200

Length :

1.7mm

Number of Elements :

2

Gain Bandwidth Product :

100MHz

Pin Count :

6

Height :

600μm

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Element Configuration :

Dual

Radiation Hardening :

No

Max Breakdown Voltage :

45V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Forward Voltage :

1V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Weight :

4.535924g

Mount :

Surface Mount

Transition Frequency :

100MHz

Forward Current :

15mA

Collector Emitter Voltage (VCEO) :

45V

Package / Case :

SOT-563, SOT-666

Series :

Automotive, AEC-Q101

Max Repetitive Reverse Voltage (Vrrm) :

70V

ECCN Code :

EAR99

Polarity :

PNP

Max Power Dissipation :

200mW

Published :

2001

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Flat

Number of Terminations :

6

Power Dissipation :

200mW

Frequency :

100MHz

Collector Base Voltage (VCBO) :

50V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Transistor Type :

2 PNP (Dual)

Max Collector Current :

100mA

Width :

1.3mm

Collector Emitter Saturation Voltage :

400mV

Max Forward Surge Current (Ifsm) :

100mA