BC857BTT1
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- Mfr.Part #
- BC857BTT1
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC75 SOT416
- Stock
- 44,783
- In Stock ：
- 44,783
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Width :
- 900μm
- Length :
- 1.65mm
- Pin Count :
- 3
- Max Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Height :
- 900μm
- hFE Min :
- 150
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BC857*TT
- Package / Case :
- SC-75, SOT-416
- Voltage - Rated DC :
- -45V
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Surface Mount :
- yes
- Current Rating :
- -100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Power - Max :
- 200mW
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- -650mV
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 8 Weeks
- Datasheets
- BC857BTT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC857BTT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC857BTT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BTT1G Applications
There are a lot of ON Semiconductor
BC857BTT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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