BC857BT116
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- Mfr.Part #
- BC857BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SST3
- Stock
- 8,811
- In Stock ：
- 8,811
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -100mA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- BC85*
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- Contact Plating :
- Copper, Silver, Tin
- Max Breakdown Voltage :
- 45V
- Published :
- 1998
- hFE Min :
- 210
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector-Base Capacitance-Max :
- 5pF
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Termination :
- SMD/SMT
- Gain Bandwidth Product :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -45V
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 350mW
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 13 Weeks
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC857BT116
BC857BT116 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BT116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC857BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BT116 Applications
There are a lot of ROHM Semiconductor
BC857BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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