BC857BT-7
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- Mfr.Part #
- BC857BT-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT523
- Stock
- 13,110
- In Stock ：
- 13,110
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-523
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 220
- Element Configuration :
- Single
- Power Dissipation :
- 150mW
- Transistor Type :
- PNP
- Length :
- 1.6mm
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC857BT
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Additional Feature :
- High Reliability
- Voltage - Rated DC :
- -50V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -300mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Factory Lead Time :
- 19 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Continuous Collector Current :
- -100mA
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Width :
- 800μm
- Weight :
- 2.012816mg
- Frequency :
- 100MHz
- Pin Count :
- 3
- Max Breakdown Voltage :
- 45V
- Height :
- 750μm
- Current Rating :
- -100mA
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Datasheets
- BC857BT-7
BC857BT-7 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
BC857BT-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BT-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BT-7-F Applications
There are a lot of Diodes Incorporated
BC857BT-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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