BC857BT-7
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- Mfr.Part #
- BC857BT-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT523
- Stock
- 13,110
- In Stock ：
- 13,110
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- High Reliability
- Terminal Position :
- Dual
- Continuous Collector Current :
- -100mA
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 150mW
- Element Configuration :
- Single
- Height :
- 750μm
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -100mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- SOT-523
- Base Part Number :
- BC857BT
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 100MHz
- hFE Min :
- 220
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 2.012816mg
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Radiation Hardening :
- No
- Length :
- 1.6mm
- Width :
- 800μm
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 19 Weeks
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -50V
- Power Dissipation :
- 150mW
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- Datasheets
- BC857BT-7
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-523 Tape & Reel (TR) Surface Mount
BC857BT-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BT-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BT-7-F Applications
There are a lot of Diodes Incorporated
BC857BT-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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