BC857BS

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Factory Lead Time :

15 Weeks

Pin Count :

6

Element Configuration :

Dual

Weight :

6.010099mg

Width :

1.35mm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

-5V

Max Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Lead Free :

Lead Free

Length :

2.2mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

-400mV

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

ECCN Code :

EAR99

Number of Terminations :

6

Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Number of Pins :

6

Max Breakdown Voltage :

45V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

-45V

Collector Base Voltage (VCBO) :

-50V

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Voltage (VCEO) :

45V

Height :

1mm

Number of Elements :

2

Contact Plating :

Tin