BC857BQB-QZ

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Mfr.Part #
BC857BQB-QZ
Manufacturer
Nexperia
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR IN DFN PACK
Stock
6,607
In Stock :
6,607

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
15nA (ICBO)
Supplier Device Package :
DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA, 5V
Manufacturer :
Nexperia
Power - Max :
340 mW
RoHS :
Details
Configuration :
Single
Frequency - Transition :
100MHz
Product Status :
Active
Mounting Type :
Surface Mount, Wettable Flank
Transistor Polarity :
PNP
Maximum Operating Temperature :
+ 150 C
Voltage - Collector Emitter Breakdown (Max) :
45 V
Minimum Operating Temperature :
- 55 C
Subcategory :
Transistors
Package / Case :
3-XDFN Exposed Pad
Product Type :
BJTs - Bipolar Transistors
Power Dissipation :
420
Qualification :
AEC-Q101
Packaging :
MouseReel
Transistor Type :
PNP
Current - Collector (Ic) (Max) :
100 mA
Operating Temperature :
150°C (TJ)
Continuous Collector Current :
100
Product Category :
Bipolar Transistors - BJT
Mounting Style :
SMD/SMT
Series :
Automotive, AEC-Q101
Transition Frequency :
100
Brand :
Nexperia
Package :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Technology :
Si
Datasheets
BC857BQB-QZ
Introducing Transistors - Bipolar (BJT) - Single Nexperia BC857BQB-QZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Wettable Flank, Package / Case:3-XDFN Exposed Pad, Operating Temperature:150°C (TJ), BC857BQB-QZ pinout, BC857BQB-QZ datasheet PDF, BC857BQB-QZ amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BC857BQB-QZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BC857BQB-QZ


PNP 150°C (TJ) 15nA (ICBO) 3-XDFN Exposed Pad MouseReel Surface Mount, Wettable Flank

BC857BQB-QZ Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA, 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Continuous collector voltages of 100 should be maintained to achieve high efficiency.Parts of this part have transition frequencies of 100.DFN1110D-3 is the supplier device package for this product.This device displays a 45 V maximum voltage - Collector Emitter Breakdown.

BC857BQB-QZ Features


the DC current gain for this device is 220 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100
the supplier device package of DFN1110D-3


BC857BQB-QZ Applications


There are a lot of Nexperia USA Inc.
BC857BQB-QZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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