BC857BQAZ
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- Mfr.Part #
- BC857BQAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC857 - 45 V, 100 MA PN
- Stock
- 5,931
- In Stock ：
- 5,931
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Package / Case :
- 3-XDFN Exposed Pad
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 100mA
- Power - Max :
- 280mW
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-N3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Reference Standard :
- AEC-Q101; IEC-60134
- Series :
- Automotive, AEC-Q101
- Frequency - Transition :
- 100MHz
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400mV
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Terminal Form :
- NO LEAD
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Configuration :
- Single
- Max Power Dissipation :
- 280mW
- Datasheets
- BC857BQAZ
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857BQAZ Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857BQAZ Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BQAZ Applications
There are a lot of Nexperia USA Inc.
BC857BQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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