BC857BQAZ
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- Mfr.Part #
- BC857BQAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA BC857 - 45 V, 100 MA PN
- Stock
- 5,931
- In Stock ：
- 5,931
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Terminal Form :
- NO LEAD
- Transistor Element Material :
- SILICON
- Power - Max :
- 280mW
- Number of Elements :
- 1
- Configuration :
- Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Case Connection :
- COLLECTOR
- Reference Standard :
- AEC-Q101; IEC-60134
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-XDFN Exposed Pad
- JESD-30 Code :
- R-PDSO-N3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Power Dissipation :
- 280mW
- Published :
- 2014
- Terminal Position :
- Dual
- Datasheets
- BC857BQAZ
BC857BQAZ Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857BQAZ Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857BQAZ Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BQAZ Applications
There are a lot of Nexperia USA Inc.
BC857BQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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