BC857BQAZ
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- Mfr.Part #
- BC857BQAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A DFN1010D-3
- Stock
- 33,778
- In Stock ：
- 33,778
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-XDFN Exposed Pad
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Reference Standard :
- AEC-Q101; IEC-60134
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-N3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Published :
- 2014
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Max Breakdown Voltage :
- 45V
- Frequency - Transition :
- 100MHz
- Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- PNP
- Power - Max :
- 280mW
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC857BQAZ
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857BQAZ Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857BQAZ Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857BQAZ Applications
There are a lot of Nexperia USA Inc.
BC857BQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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