BC857BQ

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Mfr.Part #
BC857BQ
Manufacturer
YANGJIE
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
SOT-23 PNP 0.3W 0.1A -50V Transi
Stock
16,742
In Stock :
16,742

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Manufacturer :
YANGJIE
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
400mV
Max Breakdown Voltage :
45V
Mounting Type :
Surface Mount
Max Power Dissipation :
280mW
Case Connection :
COLLECTOR
Frequency - Transition :
100MHz
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 100mA
Power - Max :
280mW
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Polarity/Channel Type :
PNP
Package / Case :
3-XDFN Exposed Pad
JESD-30 Code :
R-PDSO-N3
Transistor Element Material :
SILICON
Terminal Form :
NO LEAD
Reference Standard :
AEC-Q101; IEC-60134
Max Collector Current :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Series :
Automotive, AEC-Q101
Operating Temperature :
150°C TJ
Number of Terminations :
3
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
45V
RoHS Status :
ROHS3 Compliant
Transistor Type :
PNP
Pin Count :
3
Transition Frequency :
100MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
15nA ICBO
Configuration :
Single
Factory Lead Time :
4 Weeks
Terminal Position :
Dual
Published :
2014
Datasheets
BC857BQ
Introducing Transistors - Bipolar (BJT) - Single YANGJIE BC857BQ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-XDFN Exposed Pad, Operating Temperature:150°C TJ, Number of Terminations:3, BC857BQ pinout, BC857BQ datasheet PDF, BC857BQ amp .Beyond Transistors - Bipolar (BJT) - Single YANGJIE BC857BQ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount

BC857BQAZ Overview


In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC857BQAZ Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz


BC857BQAZ Applications


There are a lot of Nexperia USA Inc.
BC857BQAZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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