BC857BMTF
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- Mfr.Part #
- BC857BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 29,387
- In Stock ：
- 29,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Power Dissipation :
- 310mW
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Weight :
- 30mg
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 310mW
- Base Part Number :
- BC857
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Lead Free :
- Lead Free
- hFE Min :
- 110
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 150MHz
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- -50V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Height :
- 970μm
- Current Rating :
- -100mA
- Published :
- 2004
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- Frequency :
- 150MHz
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 14 hours ago)
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Voltage - Rated DC :
- -45V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Element Configuration :
- Single
- Datasheets
- BC857BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC857BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC857BMTF Applications
There are a lot of ON Semiconductor
BC857BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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