BC857BLT3G
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- Mfr.Part #
- BC857BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 40,877
- In Stock ：
- 40,877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Gull wing
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- -650mV
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 100MHz
- hFE Min :
- 220
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current Rating :
- -100mA
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Datasheets
- BC857BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT3G Applications
There are a lot of ON Semiconductor
BC857BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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