BC857BLT3G
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- Mfr.Part #
- BC857BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 40,877
- In Stock ：
- 40,877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 220
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Pin Count :
- 3
- Current Rating :
- -100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -650mV
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC857BLT3G
BC857BLT3G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT3G Applications
There are a lot of ON Semiconductor
BC857BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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