BC857BLT1G
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- Mfr.Part #
- BC857BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 19,457
- In Stock ：
- 19,457
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- hFE Min :
- 220
- Voltage - Rated DC :
- -45V
- Collector Emitter Saturation Voltage :
- -650mV
- Terminal Form :
- Gull wing
- Height :
- 940μm
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Packaging :
- Cut Tape (CT)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Current Rating :
- -100mA
- Published :
- 2005
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Datasheets
- BC857BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857BLT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT1G Applications
There are a lot of ON Semiconductor
BC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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