BC857BLT1
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- Mfr.Part #
- BC857BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 100MA SOT23
- Stock
- 92,803
- In Stock ：
- 92,803
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Frequency :
- 100MHz
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- hFE Min :
- 220
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Surface Mount :
- yes
- Length :
- 2.9mm
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -650mV
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Height :
- 940μm
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Width :
- 1.3mm
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Terminal Position :
- Dual
- Datasheets
- BC857BLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857BLT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT1G Applications
There are a lot of ON Semiconductor
BC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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