BC857BLT1
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- Mfr.Part #
- BC857BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 100MA SOT23
- Stock
- 92,803
- In Stock ：
- 92,803
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Length :
- 2.9mm
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Voltage - Rated DC :
- -45V
- Current Rating :
- -100mA
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Width :
- 1.3mm
- hFE Min :
- 220
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Published :
- 2005
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 100MHz
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Packaging :
- Cut Tape (CT)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 940μm
- Collector Emitter Saturation Voltage :
- -650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Datasheets
- BC857BLT1
BC857BLT1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857BLT1G Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857BLT1G Applications
There are a lot of ON Semiconductor
BC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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