BC857BLP4-7B
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- Mfr.Part #
- BC857BLP4-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A 3DFN
- Stock
- 30,296
- In Stock ：
- 30,296
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -50V
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 15 Weeks
- Published :
- 2011
- Transition Frequency :
- 100MHz
- Package / Case :
- 3-XFDFN
- JESD-609 Code :
- e4
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 650mV
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Power - Max :
- 250mW
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Continuous Collector Current :
- -100mA
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC857BLP
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -650mV
- Number of Terminations :
- 3
- Datasheets
- BC857BLP4-7B
BC857BLP4-7B Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
BC857BLP4-7B Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -650mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -100mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 45V volts.The maximum collector current is 100mA volts.
BC857BLP4-7B Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC857BLP4-7B Applications
There are a lot of Diodes Incorporated
BC857BLP4-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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