BC857BLP4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

45V

Number of Pins :

3

REACH SVHC :

No SVHC

Contact Plating :

Gold

Collector Base Voltage (VCBO) :

50V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Max Breakdown Voltage :

45V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

hFE Min :

220

Mount :

Surface Mount

Pbfree Code :

yes

Number of Elements :

1

Max Power Dissipation :

250mW

Height :

350μm

Gain Bandwidth Product :

100MHz

Length :

1mm

Packaging :

Tape and Reel (TR)

Factory Lead Time :

15 Weeks

Published :

2011

Collector Emitter Voltage (VCEO) :

45V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

600μm

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Package / Case :

3-XFDFN

Terminal Form :

NO LEAD

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Collector Current :

100mA

JESD-609 Code :

e4

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

15nA ICBO

Power - Max :

250mW

Base Part Number :

BC857BLP4