BC857BLP4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Number of Elements :

1

Transition Frequency :

100MHz

Width :

600μm

Collector Emitter Breakdown Voltage :

45V

Factory Lead Time :

15 Weeks

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Package / Case :

3-XFDFN

Max Breakdown Voltage :

45V

Power - Max :

250mW

Pbfree Code :

yes

Number of Pins :

3

Collector Base Voltage (VCBO) :

50V

JESD-609 Code :

e4

Terminal Form :

NO LEAD

REACH SVHC :

No SVHC

Max Power Dissipation :

250mW

ECCN Code :

EAR99

Length :

1mm

Base Part Number :

BC857BLP4

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Height :

350μm

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Transistor Type :

PNP

Contact Plating :

Gold

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

hFE Min :

220

Max Collector Current :

100mA

Published :

2011

Case Connection :

COLLECTOR

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount