BC857BLP-7B
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- Mfr.Part #
- BC857BLP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A 3DFN
- Stock
- 21,832
- In Stock ：
- 21,832
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Gold
- Additional Feature :
- High Reliability
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -50V
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -650mV
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 650mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-UFDFN
- Max Power Dissipation :
- 250mW
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Terminal Form :
- NO LEAD
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC857BLP
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Power - Max :
- 250mW
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 19 Weeks
- Element Configuration :
- Single
- Continuous Collector Current :
- -100mA
- Datasheets
- BC857BLP-7B
BC857BLP-7B Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
BC857BLP-7B Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC857BLP-7B Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC857BLP-7B Applications
There are a lot of Diodes Incorporated
BC857BLP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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