BC857BHZGT116
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- Mfr.Part #
- BC857BHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- PNP GENERAL PURPOSE TRANSISTOR (
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100mA
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- Frequency - Transition :
- 250MHz
- Factory Lead Time :
- 13 Weeks
- Surface Mount :
- yes
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Power - Max :
- 200mW
- JESD-30 Code :
- R-PDSO-G3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Series :
- Automotive, AEC-Q101
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 250MHz
- Datasheets
- BC857BHZGT116
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC857BHZGT116 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 250MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC857BHZGT116 Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
BC857BHZGT116 Applications
There are a lot of ROHM Semiconductor
BC857BHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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