BC857BFZ-7B
- Mfr.Part #
- BC857BFZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A 3DFN
- Stock
- 81
- In Stock :
- 81
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2015
- Max Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 270MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- JESD-609 Code :
- e4
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- -100mA
- Frequency - Transition :
- 100MHz
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- -5V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- hFE Min :
- 220
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -250mV
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -50V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 500mV
- Package / Case :
- 3-XFDFN
- Max Power Dissipation :
- 435mW
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA
- Terminal Form :
- NO LEAD
- Power - Max :
- 435mW
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- ECCN Code :
- EAR99
- Datasheets
- BC857BFZ-7B
BC857BFZ-7B Documents

PNP -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
BC857BFZ-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 270MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 270MHz
BC857BFZ-7B Applications
There are a lot of Diodes Incorporated
BC857BFZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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