BC857BFZ-7B
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- Mfr.Part #
- BC857BFZ-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A 3DFN
- Stock
- 81
- In Stock ：
- 81
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- 3-XFDFN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Frequency - Transition :
- 100MHz
- hFE Min :
- 220
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 435mW
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 435mW
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -50V
- Published :
- 2015
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Continuous Collector Current :
- -100mA
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 270MHz
- Datasheets
- BC857BFZ-7B
PNP -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
BC857BFZ-7B Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 100mA.A -100mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 270MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC857BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 270MHz
BC857BFZ-7B Applications
There are a lot of Diodes Incorporated
BC857BFZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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