BC857BFA-7B
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- Mfr.Part #
- BC857BFA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A X2-DFN0806-3
- Stock
- 37,210
- In Stock ：
- 37,210
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -500mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency - Transition :
- 340MHz
- Power - Max :
- 435mW
- Additional Feature :
- High Reliability
- Width :
- 850μm
- Number of Elements :
- 1
- Published :
- 2016
- Reference Standard :
- AEC-Q101
- Package / Case :
- 3-XFDFN
- Length :
- 650μm
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Max Power Dissipation :
- 435mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 100mA
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Height :
- 350μm
- Terminal Form :
- NO LEAD
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Contact Plating :
- Gold
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e4
- Transition Frequency :
- 340MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- BC857BFA-7B
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
BC857BFA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 340MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC857BFA-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 340MHz
BC857BFA-7B Applications
There are a lot of Diodes Incorporated
BC857BFA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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