BC857BE6327HTSA1
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- Mfr.Part #
- BC857BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 2,193,599
- In Stock ：
- 2,193,599
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 330mW
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 45V
- Current Rating :
- -100mA
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- Gull wing
- Current :
- 200mA
- Length :
- 2.9mm
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 650mV
- Operating Temperature :
- 150°C TJ
- Width :
- 1.3mm
- Power Dissipation :
- 330mW
- Height :
- 1mm
- Transition Frequency :
- 250MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 650mV
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Element Configuration :
- Single
- Base Part Number :
- BC857
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- BC857BE6327HTSA1
BC857BE6327HTSA1 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC857BE6327HTSA1 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC857BE6327HTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC857BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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