BC857BDW1T1G
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- Mfr.Part #
- BC857BDW1T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2PNP 45V 0.1A SC88/SC70-6
- Stock
- 78,500
- In Stock ：
- 78,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC857BD
- Number of Elements :
- 2
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 900μm
- Power Dissipation :
- 380mW
- Published :
- 2005
- Element Configuration :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Length :
- 2mm
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 380mW
- Radiation Hardening :
- No
- Width :
- 1.25mm
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -45V
- Max Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Packaging :
- Cut Tape (CT)
- Polarity :
- PNP
- Transistor Type :
- 2 PNP (Dual)
- Pin Count :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 220
- Collector Emitter Saturation Voltage :
- -650mV
- Contact Plating :
- Tin
- Datasheets
- BC857BDW1T1G
BC857BDW1T1G Documents
BC857BDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
The BC857BDW1T1G is a 2-pin PNP bipolar transistor array in a SOT363 package from ON Semiconductor. It has a collector-emitter voltage of 45V and a collector current of 0.1A.
Features:
• 2-pin PNP bipolar transistor array
• SOT363 package
• Collector-emitter voltage of 45V
• Collector current of 0.1A
• Low collector-emitter saturation voltage
• High current gain
• Low noise
• High switching speed
Applications:
The BC857BDW1T1G is suitable for use in a variety of applications, including power management, audio amplifiers, motor control, and switching circuits. It is also suitable for use in automotive and industrial applications.
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