BC857B/DG/B4R
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- Mfr.Part #
- BC857B/DG/B4R
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 13,351
- In Stock ：
- 13,351
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-236AB
- Manufacturer :
- IDEAL Industries
- Operating Temperature :
- 150°C (TJ)
- Frequency - Transition :
- 100MHz
- Base Product Number :
- BC857
- Package :
- Tape and Reel (TR)
- Series :
- -
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Current - Collector (Ic) (Max) :
- 100 mA
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA, 5V
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 250 mW
- Datasheets
- BC857B/DG/B4R
PNP 150°C (TJ) 15nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
BC857B/DG/B4R Overview
In this device, the DC current gain is 125 @ 2mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Product comes in the supplier's device package TO-236AB.There is a 45 V maximal voltage in the device due to collector-emitter breakdown.
BC857B/DG/B4R Features
the DC current gain for this device is 125 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of TO-236AB
BC857B/DG/B4R Applications
There are a lot of Nexperia
BC857B/DG/B4R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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