BC857AW,115
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- Mfr.Part #
- BC857AW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC857AW - SMALL SIGNAL
- Stock
- 372
- In Stock ：
- 372
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 125
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2009
- Transistor Application :
- SWITCHING
- Collector-Base Capacitance-Max :
- 5pF
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Base Part Number :
- BC857
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 200mW
- Datasheets
- BC857AW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC857AW,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC857AW,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC857AW,115 Applications
There are a lot of Nexperia USA Inc.
BC857AW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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