BC857AQAZ

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Mfr.Part #
BC857AQAZ
Manufacturer
NXP Semiconductors
Package / Case
3-XDFN Exposed Pad
Datasheet
Download
Description
NOW NEXPERIA BC857AQA SMALL SIGN
Stock
10,000
In Stock :
10,000

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
100MHz
JESD-30 Code :
R-PDSO-N3
Mounting Type :
Surface Mount
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
125 @ 2mA 5V
Max Collector Current :
100mA
Package / Case :
3-XDFN Exposed Pad
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
400mV
Number of Terminations :
3
Transistor Application :
SWITCHING
Pin Count :
3
Series :
Automotive, AEC-Q101
Max Power Dissipation :
280mW
Factory Lead Time :
4 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
15nA ICBO
Mount :
Surface Mount
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 100mA
RoHS Status :
ROHS3 Compliant
Terminal Form :
NO LEAD
Transistor Type :
PNP
Max Breakdown Voltage :
45V
Published :
2014
Power - Max :
280mW
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
45V
Reference Standard :
AEC-Q101; IEC-60134
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Transition Frequency :
100MHz
Terminal Position :
Dual
Configuration :
Single
Datasheets
BC857AQAZ
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC857AQAZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-XDFN Exposed Pad, Number of Terminations:3, Operating Temperature:150°C TJ, BC857AQAZ pinout, BC857AQAZ datasheet PDF, BC857AQAZ amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC857AQAZ ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC857AQAZ


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount

BC857AQAZ Overview


In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC857AQAZ Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz


BC857AQAZ Applications


There are a lot of Nexperia USA Inc.
BC857AQAZ applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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