BC857AQAZ
- Mfr.Part #
- BC857AQAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA BC857AQA SMALL SIGN
- Stock
- 10,000
- In Stock :
- 10,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- JESD-30 Code :
- R-PDSO-N3
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Collector Current :
- 100mA
- Package / Case :
- 3-XDFN Exposed Pad
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 280mW
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Published :
- 2014
- Power - Max :
- 280mW
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- Reference Standard :
- AEC-Q101; IEC-60134
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Configuration :
- Single
- Datasheets
- BC857AQAZ

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC857AQAZ Overview
In this device, the DC current gain is 125 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC857AQAZ Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857AQAZ Applications
There are a lot of Nexperia USA Inc.
BC857AQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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