BC856W,135
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- Mfr.Part #
- BC856W,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 139,766
- In Stock ：
- 139,766
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 65V
- Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- -250mV
- Base Part Number :
- BC856
- Transition Frequency :
- 100MHz
- Collector-Base Capacitance-Max :
- 5pF
- Number of Elements :
- 1
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 65V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Datasheets
- BC856W,135
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856W,135 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC856W,135 Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC856W,135 Applications
There are a lot of Nexperia USA Inc.
BC856W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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