BC856UE6327HTSA1
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- Mfr.Part #
- BC856UE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS 2PNP 65V 0.1A SC74-6
- Stock
- 38,455
- In Stock ：
- 38,455
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Max Power Dissipation :
- 250mW
- Reference Standard :
- AEC-Q101
- Published :
- 2011
- Power Dissipation :
- 250mW
- Current Rating :
- -100mA
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 2
- Transition Frequency :
- 250MHz
- Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- hFE Min :
- 200
- Halogen Free :
- Not Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 650mV
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-74, SOT-457
- Polarity :
- PNP
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 65V
- Contact Plating :
- Tin
- Transistor Type :
- 2 PNP (Dual)
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Datasheets
- BC856UE6327HTSA1
BC856UE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Infineon Technologies stock available at
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