BC856SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

6-VSSOP, SC-88, SOT-363

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

65V

Collector Emitter Saturation Voltage :

250mV

Mount :

Surface Mount

Max Power Dissipation :

250mW

Length :

2mm

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

250MHz

ECCN Code :

EAR99

Voltage :

65V

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

15nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Base Part Number :

BC856S

Reference Standard :

AEC-Q101

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current :

1A

Height :

800μm

Gain Bandwidth Product :

250MHz

Factory Lead Time :

4 Weeks

Collector Emitter Voltage (VCEO) :

65V

Published :

2005

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Current - Collector (Ic) (Max) :

100mA

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Max Collector Current :

100mA

Transistor Type :

2 PNP (Dual)

Halogen Free :

Halogen Free

Max Frequency :

250MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Width :

1.25mm

Polarity :

PNP

Contact Plating :

Tin

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

hFE Min :

200

JESD-609 Code :

e3

Operating Temperature :

150°C TJ