BC856BWT1G
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- Mfr.Part #
- BC856BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SC70-3
- Stock
- 2,049
- In Stock ：
- 2,049
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Published :
- 2005
- Power Dissipation :
- 150mW
- Current Rating :
- -100mA
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 150mW
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Base Part Number :
- BC85**W
- Voltage - Rated DC :
- -65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 900μm
- Lead Free :
- Lead Free
- Factory Lead Time :
- 5 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Width :
- 1.35mm
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 65V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- -650mV
- Element Configuration :
- Single
- Length :
- 2.2mm
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 65V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- hFE Min :
- 150
- Collector Emitter Voltage (VCEO) :
- 65V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Datasheets
- BC856BWT1G
BC856BWT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856BWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC856BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BWT1G Applications
There are a lot of ON Semiconductor
BC856BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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