BC856BWT1G
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- Mfr.Part #
- BC856BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SC70-3
- Stock
- 2,049
- In Stock ：
- 2,049
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Max Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Length :
- 2.2mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 150mW
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -65V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 65V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 65V
- Mounting Type :
- Surface Mount
- Current Rating :
- -100mA
- Published :
- 2005
- Number of Elements :
- 1
- Surface Mount :
- yes
- Base Part Number :
- BC85**W
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 5 Weeks
- Width :
- 1.35mm
- Collector Emitter Saturation Voltage :
- -650mV
- Package / Case :
- SC-70, SOT-323
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 900μm
- hFE Min :
- 150
- Datasheets
- BC856BWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856BWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC856BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BWT1G Applications
There are a lot of ON Semiconductor
BC856BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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