BC856BW
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- Mfr.Part #
- BC856BW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT323
- Stock
- 31,305
- In Stock ：
- 31,305
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Number of Elements :
- 1
- Supplier Device Package :
- SOT-323
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Voltage - Collector Emitter Breakdown (Max) :
- 65V
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Frequency :
- 200MHz
- Length :
- 2.2mm
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 19 Weeks
- Voltage - Rated DC :
- -65V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC856BW
- Weight :
- 6.010099mg
- Frequency :
- 200MHz
- Mount :
- Surface Mount
- Width :
- 1.35mm
- Min Operating Temperature :
- -65°C
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Power Dissipation :
- 200mW
- Height :
- 1mm
- Collector Emitter Saturation Voltage :
- -650mV
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 100mA
- Max Operating Temperature :
- 150°C
- Power - Max :
- 200mW
- Frequency - Transition :
- 200MHz
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 65V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Datasheets
- BC856BW
PNP -65°C~150°C TJ 15nA ICBO 1 Elements SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC856BW-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Input voltage breakdown is available at 65V volts.Product comes in the supplier's device package SOT-323.There is a 65V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC856BW-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
the supplier device package of SOT-323
BC856BW-7-F Applications
There are a lot of Diodes Incorporated
BC856BW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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