BC856BS

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

80V

Peak Reflow Temperature (Cel) :

260

Max Forward Surge Current (Ifsm) :

100mA

Series :

Automotive, AEC-Q101

Number of Elements :

2

Forward Current :

70mA

REACH SVHC :

No SVHC

Forward Voltage :

410mV

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

hFE Min :

290

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Application :

SWITCHING

Max Repetitive Reverse Voltage (Vrrm) :

70V

Gain Bandwidth Product :

100MHz

JESD-30 Code :

R-PDSO-G6

Time@Peak Reflow Temperature-Max (s) :

30

Max Collector Current :

100mA

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

65V

Frequency :

100MHz

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Operating Temperature :

150°C TJ

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Transistor Type :

2 PNP (Dual)

Published :

2009

Collector Emitter Breakdown Voltage :

65V

Factory Lead Time :

4 Weeks

Max Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Number of Pins :

4

Transition Frequency :

100MHz

Element Configuration :

Dual

Terminal Form :

Gull wing

Max Breakdown Voltage :

65V

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363