BC856BS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

Forward Current :

70mA

Max Breakdown Voltage :

65V

Frequency :

100MHz

Power Dissipation :

300mW

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Type :

2 PNP (Dual)

Max Forward Surge Current (Ifsm) :

100mA

Transistor Element Material :

SILICON

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity :

NPN, PNP

Max Repetitive Reverse Voltage (Vrrm) :

70V

Number of Terminations :

6

Series :

Automotive, AEC-Q101

Forward Voltage :

410mV

Element Configuration :

Dual

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

65V

Published :

2009

Collector Emitter Voltage (VCEO) :

65V

Number of Elements :

2

Terminal Form :

Gull wing

Gain Bandwidth Product :

100MHz

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

hFE Min :

290

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

80V

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Contact Plating :

Tin

Pin Count :

6

Lead Free :

Lead Free

Max Collector Current :

100mA

Emitter Base Voltage (VEBO) :

6V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA