BC856BLT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Height :

940μm

Contact Plating :

Tin

Surface Mount :

yes

ECCN Code :

EAR99

hFE Min :

220

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lead Free :

Lead Free

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.3mm

Published :

2005

Pin Count :

3

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

80V

Max Breakdown Voltage :

65V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

2.9mm

Terminal Position :

Dual

Number of Terminations :

3

Power Dissipation :

300mW

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-65V

Transistor Type :

PNP

Number of Pins :

3

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

65V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

65V

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

-650mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Current - Collector Cutoff (Max) :

15nA ICBO

Max Collector Current :

100mA

Current Rating :

-100mA