BC856BLT3

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

100MHz

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-65V

Collector Emitter Breakdown Voltage :

65V

Frequency :

100MHz

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

15nA ICBO

Max Breakdown Voltage :

65V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Terminal Position :

Dual

Lead Free :

Lead Free

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Current Rating :

-100mA

Collector Emitter Saturation Voltage :

-650mV

Published :

2005

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

65V

hFE Min :

220

Gain Bandwidth Product :

100MHz

Radiation Hardening :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

300mW

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Surface Mount :

yes

JESD-609 Code :

e3

Height :

940μm

Pin Count :

3

Terminal Form :

Gull wing

Transistor Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Element Configuration :

Single

Length :

2.9mm

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

80V

Peak Reflow Temperature (Cel) :

260