BC856BLT1G
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- Mfr.Part #
- BC856BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 32,766
- In Stock ：
- 32,766
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- -100mA
- hFE Min :
- 220
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Height :
- 940μm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- PNP
- Packaging :
- Cut Tape (CT)
- Max Breakdown Voltage :
- 65V
- Number of Pins :
- 3
- Voltage - Rated DC :
- -65V
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 65V
- Width :
- 1.3mm
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -650mV
- Datasheets
- BC856BLT1G
BC856BLT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BLT1G Applications
There are a lot of ON Semiconductor
BC856BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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