BC856BLT1G
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- Mfr.Part #
- BC856BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 32,766
- In Stock ：
- 32,766
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Length :
- 2.9mm
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 220
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -65V
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -100mA
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Emitter Voltage (VCEO) :
- 65V
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 65V
- Max Power Dissipation :
- 300mW
- Width :
- 1.3mm
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -650mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Height :
- 940μm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Datasheets
- BC856BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BLT1G Applications
There are a lot of ON Semiconductor
BC856BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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