BC856BLT1
- Mfr.Part #
- BC856BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 100MA SOT23
- Stock
- 29,672
- In Stock :
- 29,672
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Cut Tape (CT)
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.3mm
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- hFE Min :
- 220
- Factory Lead Time :
- 4 Weeks
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 65V
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- -650mV
- Voltage - Rated DC :
- -65V
- Max Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Height :
- 940μm
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- PNP
- Length :
- 2.9mm
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Datasheets
- BC856BLT1

PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC856BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.The collector emitter saturation voltage is -650mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 65V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC856BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC856BLT1G Applications
There are a lot of ON Semiconductor
BC856BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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